Nonstable Latchups in CMOS ICs Under Pulsed Laser Irradiation
In: IEEE Transactions on Nuclear Science, Jg. 67 (2020-07-01), S. 1540-1546
Online
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Zugriff:
This article concerns experimental and simulation results on nonstable latchups (SLs) in CMOS integrated circuits (ICs) under pulsed laser irradiation. Different transient responses in elements of the p-n-p-n structure and irregular ionization distribution on the IC surface are the main reasons for non-SLs. Radiation experimental test results are presented as well as a discussion of non-SL mechanisms.
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Nonstable Latchups in CMOS ICs Under Pulsed Laser Irradiation
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Autor/in / Beteiligte Person: | Chumakov, Alexander I. ; Shvetsov-Shilovskiy, I. I. ; Pechenkin, Alexander A. ; Bobrovsky, D. V. |
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Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 67 (2020-07-01), S. 1540-1546 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2020 |
Medientyp: | unknown |
ISSN: | 1558-1578 (print) ; 0018-9499 (print) |
DOI: | 10.1109/tns.2020.3001169 |
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