The Effect of Adsorbent Layer Thickness and Gallium Concentration on the Efficiency of a Dual-Junction Copper Indium Gallium Diselenide Solar Cell
In: Journal of Electronic Materials, Jg. 49 (2019-11-26), S. 1454-1461
Online
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Zugriff:
The split of the sunlight spectrum by the bandgap energy of multi-junction solar cells is a highly effective way to increase solar cell efficiency. The reason is that the energy of photons is effectively absorbed, and there is a reduction in solar cell loss. In this contribution, we report on the performance of a double-junction copper gallium diselenide/copper indium gallium diselenide (CGS/CIGS) solar cell with a cadmium sulfide (CdS) buffer layer simulator. The J–V characteristics and the external quantum efficiency were simulated under AM1.5 illumination. Increased efficiency was seen as a result of the change in the thickness of layers and different molar ratio amounts of gallium, and the optimal amount of each factor was obtained. In this study, a single CGS solar cell was used as the top cell and a single CIGS solar cell as the bottom cell in the tandem configuration, which showed conversion efficiencies of 16.175% and 15.696%, respectively. Finally, solar cell efficiency of 32.3% was obtained in the double-junction state, an increase of 6% compared with the reference cell.
Titel: |
The Effect of Adsorbent Layer Thickness and Gallium Concentration on the Efficiency of a Dual-Junction Copper Indium Gallium Diselenide Solar Cell
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Autor/in / Beteiligte Person: | Hedayati, Maryam ; Olyaee, Saeed ; Seyed Mohamad Bagher Ghorashi |
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Zeitschrift: | Journal of Electronic Materials, Jg. 49 (2019-11-26), S. 1454-1461 |
Veröffentlichung: | Springer Science and Business Media LLC, 2019 |
Medientyp: | unknown |
ISSN: | 1543-186X (print) ; 0361-5235 (print) |
DOI: | 10.1007/s11664-019-07824-0 |
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