Characterization of a ΣΔ-based CMOS monolithic detector
In: SPIE Proceedings, 2010-07-16
Online
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Zugriff:
This paper is a progress report of the design and characterization of a monolithic CMOS detector with an on-chip ΣΔ ADC. A brief description of the design and operation is given. Backside processing steps to allow for backside illumination are summarized. Current characterization results are given for pre- and post-thinned detectors. Characterization results include measurements of: gain photodiode capacitance, dark current, linearity, well depth, relative quantum efficiency, and read noise. Lastly, a detector re-design is described; and initial measurements of its photodiode capacitance and read noise are presented.
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Characterization of a ΣΔ-based CMOS monolithic detector
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Autor/in / Beteiligte Person: | Stauffer, Donald J. ; Ashe, Brian ; Figer, Donald F. ; Montagliano, Thomas ; Hanold, Brandon J. ; Ignjatovic, Zeljko ; Maricic, Danijel ; Jones, Todd J. ; Nikzad, Shouleh |
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Zeitschrift: | SPIE Proceedings, 2010-07-16 |
Veröffentlichung: | SPIE, 2010 |
Medientyp: | unknown |
ISSN: | 0277-786X (print) |
DOI: | 10.1117/12.857176 |
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