A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under -36.2 dBc EVM in 28-nm CMOS Technology
In: 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021-08-25
Online
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Zugriff:
A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than -35.35/-36.2 dB at 28 GHz.
Titel: |
A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under -36.2 dBc EVM in 28-nm CMOS Technology
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Autor/in / Beteiligte Person: | Huang, Tian-Wei ; Cheng, Yu-Tung ; Hung, Jui-Cheng ; Tsai, Jeng-Han |
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Zeitschrift: | 2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021-08-25 |
Veröffentlichung: | IEEE, 2021 |
Medientyp: | unknown |
DOI: | 10.1109/rfit52905.2021.9565315 |
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