Preparation of single-crystalline ZnO films on ZnO-buffered a-plane sapphire by chemical bath deposition

A1. Crystal structure A1. X-ray diffraction A2. Growth from solutions B1. Oxides B1. Zinc compounds B2. Semiconducting II-VI materials abstract High-quality zinc oxide (ZnO) films were successfully grown on ZnO-buffered a-plane sapphire (Al2O3 (11 2 ¯ 0)) substrates by controlling temperature for lateral growth using chemical bath deposition (CBD) at a low temperature of 601C. X-ray diffraction analysis and transmission electron microscopy micrographs showed that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. Rocking curves (o-scans) of the (0 0 0 2) reflections showed a narrow peak with full width at half maximum value of 0.501 for the ZnO film. A reciprocal space map indicated that the lattice parameters of the ZnO film (a ¼ 0.3250 nm and c ¼ 0.5207 nm) were very close to those of the wurtzite- type ZnO. The ZnO film on the ZnO-buffered Al2O3 (11 2 ¯ 0) substrate exhibited n-type conduction, with a carrier concentration of 1.9 � 10 19 cm � 3 and high carrier mobility of 22.6 cm 2 V � 1 s � 1 .