In-Die Through-BEOL Metal Wall for Noise Isolation in 180-nm FD-SOI CMOS
In: IEEE Electron Device Letters, Jg. 38 (2017-05-01), S. 630-632
Online
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Zugriff:
This letter reports a conceptual in-die through-back-end-of-the-line metal wall structure for noise isolation demonstrated in a foundry 180-nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. The near-closed-loop isolation wall was made of a trench ring etched by focused ion beam and filled with silver nano powder in a post-CMOS process module developed. Crosstalk suppression was confirmed in measurement that shows a reduction of around 9 dBm in the third-order intermodulation interferers as predicted full-wave electromagnetic co-simulation. The structure can be readily integrated into the foundry technologies as a potential crosstalk reduction solution for mixed-signal integrated circuits in FD-SOI CMOS processes.
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In-Die Through-BEOL Metal Wall for Noise Isolation in 180-nm FD-SOI CMOS
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Autor/in / Beteiligte Person: | Li, Cheng ; Chen, Qi ; Ma, Rui ; X. Shawn Wang ; Zhang, Feilong ; Wang, Chenkun ; Lu, Fei ; Wang, Albert |
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Zeitschrift: | IEEE Electron Device Letters, Jg. 38 (2017-05-01), S. 630-632 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2017 |
Medientyp: | unknown |
ISSN: | 1558-0563 (print) ; 0741-3106 (print) |
DOI: | 10.1109/led.2017.2682819 |
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