Advancing Monolayer 2-D nMOS and pMOS Transistor Integration From Growth to Van Der Waals Interface Engineering for Ultimate CMOS Scaling
In: IEEE Transactions on Electron Devices, Jg. 68 (2021-12-01), S. 6592-6598
Online
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Zugriff:
2-D-material channels enable ultimate scaling of MOSFET transistors and will help Moore's Law scaling for years. We demonstrate the state of both n- and p-MOSFETs using monolayer transition metal dichalcogenide (TMD) channels of sub-1 nm thickness and manufacturable CVD, molecular beam epitaxy (MBE), or seeded growth. nMOS devices on transferred MBE MoS₂ using novel contact metal show low variation, one of the lowest reported contact resistances ( $R_{c}$ ) of 0.4 kΩ ·μ m, low hysteresis, and good subthreshold swing (SS) of 77 mV/dec. pMOS devices using CVD WSe₂ show 89 mV/dec SS, best reported for pMOS on grown films, but on-current remains behind nMOS. We show $R_{C}$ is improved by 5x by using a bake process prior to contact metal deposition. Transfer-free, area-selective seeded growth techniques for WS₂ and MoS₂ are demonstrated as options for wafer-scale TMD channel growth. WS₂ transistors achieve 10 μA/μm on-current, highest reported on WS₂ using seeded growth. A new capacitance method is shown to monitor 2-D material contact interface quality. Gate-oxide interface engineering through metal seeding and atomic layer deposition (ALD) demonstrates that a single 2-D channel material can selectively make pMOS or nMOS transistors, alike Si CMOS, and can also be used as a method to achieve p-type doping. We compare back-gated bare channel devices with dual-gate devices and observe hysteresis-free operation and an improvement in mobility with proper passivation.
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Advancing Monolayer 2-D nMOS and pMOS Transistor Integration From Growth to Van Der Waals Interface Engineering for Ultimate CMOS Scaling
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Autor/in / Beteiligte Person: | Naylor, Carl H. ; Dorow, Chelsey ; O'brien Kevin, P ; Maxey, Kirby ; Arnab Sen Gupta ; Hsiao, Andy ; Tronic Tristan, A ; Penumatcha Ashish Verma ; Clendenning, Scott B. ; Tanay, Gosavi ; Metz, Matthew V. ; Christenson, Michael ; Lee, Sudarat ; Bristol, Robert L. ; Avci, Uygar E. ; Urusa, Alaan ; Oni, A. A. ; Zhu, Hui |
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Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 68 (2021-12-01), S. 6592-6598 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2021 |
Medientyp: | unknown |
ISSN: | 1557-9646 (print) ; 0018-9383 (print) |
DOI: | 10.1109/ted.2021.3118659 |
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