GaAs MQW modulators integrated with silicon CMOS
In: IEEE Photonics Technology Letters, Jg. 7 (1995-04-01), S. 360-362
Online
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Zugriff:
We demonstrate integration of GaAs-AlGaAs multiple quantum well modulators to silicon CMOS circuitry via flip-chip solder-bonding followed by substrate removal. We obtain 95% device yield for 32/spl times/32 arrays of devices with 15 micron solder pads. We show operation of a simple circuit composed of a modulator and a CMOS transistor. >
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GaAs MQW modulators integrated with silicon CMOS
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Autor/in / Beteiligte Person: | Goossen, Keith W. ; Miller, David A. B. ; D'Asaro, L.A. ; Tseng, B. ; Dahringer, D. ; Lentine, Anthony L. ; Walker, James A. ; Bacon, D.D. ; Hui, S.P. ; Kossives, D. ; Leibenguth, R.E. ; Chirovsky, L.M.F. |
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Zeitschrift: | IEEE Photonics Technology Letters, Jg. 7 (1995-04-01), S. 360-362 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 1995 |
Medientyp: | unknown |
ISSN: | 1941-0174 (print) ; 1041-1135 (print) |
DOI: | 10.1109/68.376802 |
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