Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory
In: IEEE Electron Device Letters, Jg. 28 (2007-03-01), S. 214-216
Online
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Zugriff:
In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mus/5 ms) and low programming current (3.5 muA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (>150degC) and good endurance (>104) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application
| Titel: |
Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory
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| Autor/in / Beteiligte Person: | Wang, Jer-Chyi ; Lee, Chien-Hsing ; Wu, Woei-Cherng ; Jhyy Cheng Liou ; Peng, Wu-Chin ; Hsieh, Tsung-Min ; Yang, Tsung-Yu ; Lai, Chao-Sung ; Wen Luh Yang ; Chao, Tien-Sheng ; Jian Hao Chen |
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| Zeitschrift: | IEEE Electron Device Letters, Jg. 28 (2007-03-01), S. 214-216 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2007 |
| Medientyp: | unknown |
| ISSN: | 0741-3106 (print) |
| DOI: | 10.1109/led.2007.891301 |
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