Ga2Se3 treatment of Cu-rich CIGS thin films to fabricate Cu-poor CIGS thin films with large grains and U-shaped Ga distribution
In: Vacuum, Jg. 152 (2018-06-01), S. 184-187
Online
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Zugriff:
Cu-rich CIGS thin films were prepared from quaternary CIGS and Cu target, and then converted into Cu-poor CIGS by depositing the Ga2Se3 layer on the Cu-rich CIGS with the subsequent annealing. In this paper, we name the process of converting Cu-rich CIGS into Cu-poor CIGS as Ga2Se3 treatment. The Ga2Se3 treatment brings out two benefits for the CIGS absorbers. It can remove the excess CuxSe phase in the Cu-rich CIGS and don't reduce the grain size of CIGS. That is to say, the Cu-poor CIGS has almost the same size of grain of the Cu-rich CIGS thin films. What's more, the Ga2Se3 treatment can also improve the content of gallium on the surface of CIGS, resulting the U-shaped gallium distribution along the depth direction. The thickness of Ga2Se3 layer has been optimized which can result in the highest conversion efficiency of 10.6% in Cu-rich CIGS based solar cells.
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Ga2Se3 treatment of Cu-rich CIGS thin films to fabricate Cu-poor CIGS thin films with large grains and U-shaped Ga distribution
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Autor/in / Beteiligte Person: | Sun, Rujun ; Ren, Guoan ; Zhao, Ming ; Peng, Xiao ; Lv, Xunyan ; Wei, Yaowei ; Zhuang, Daming ; Wu, Yixuan ; Zhang, Leng |
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Zeitschrift: | Vacuum, Jg. 152 (2018-06-01), S. 184-187 |
Veröffentlichung: | Elsevier BV, 2018 |
Medientyp: | unknown |
ISSN: | 0042-207X (print) |
DOI: | 10.1016/j.vacuum.2018.02.035 |
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