Single-Event Upset Responses of Metal–Oxide–Metal Capacitors and Diodes Used in Bulk 65-nm CMOS Analog Circuits
In: IEEE Transactions on Nuclear Science, Jg. 67 (2020-04-01), S. 698-707
Online
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Zugriff:
The focus of this article is to characterize the behavior of metal–oxide–metal (MOM) capacitors when used in a switched-capacitor circuit in a standard 65-nm 1.2-V CMOS technology subject to ionizing radiation. The goal is twofold: first, to understand radiation-induced single-event effects on a fundamental building block of analog circuits unconstrained by a particular application and second, to explore the capacitor’s use as a particle detector analogous to the diode active-pixel sensor. The single-event signal response from the diode and MOM capacitor structures were consistent with ionization; the behavior of the diode was consistent with previously published results. The diode single-event signal response exhibited a step-like waveform, whereas the MOM capacitor exhibited an exponential-decay waveform, thus indicating different detection mechanisms where liberated charges were, respectively, either collected or not collected.
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Single-Event Upset Responses of Metal–Oxide–Metal Capacitors and Diodes Used in Bulk 65-nm CMOS Analog Circuits
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Autor/in / Beteiligte Person: | Andeen, Timothy ; Parsons, John ; Ochoa, Ines ; Kinget, Peter R. ; Ban, J. ; Hsu, Chen-Kai ; Unal, Mesut ; Kalani, Sarthak ; Burton, Charles ; Wang, Qiang ; Xu, Rui ; Sun, Nan |
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Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 67 (2020-04-01), S. 698-707 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2020 |
Medientyp: | unknown |
ISSN: | 1558-1578 (print) ; 0018-9499 (print) |
DOI: | 10.1109/tns.2020.2974229 |
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