High speed LSI technologies challenging the CMOS VLSI era
In: 1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2005-03-23
Online
unknown
Zugriff:
The dominant VLSI technology for the next decade will be CMOS. Emerging technologies such as GaAs FETs, AlGaAs high electron mobility transistors, AlGaAs heterojunction bipolar transistors and Si bipolar transistors are all attempting to demonstrate performance advantages and specialized applications for each technology . . . The panel will address the potential role of these niche technologies in a CMOS VLSI dominated era.
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High speed LSI technologies challenging the CMOS VLSI era
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Autor/in / Beteiligte Person: | Greiling, P. |
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Zeitschrift: | 1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2005-03-23 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers, 2005 |
Medientyp: | unknown |
DOI: | 10.1109/isscc.1985.1156842 |
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