Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature
In: Applied Physics Letters, Jg. 108 (2016-05-09), S. 191107-191107
Online
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Zugriff:
Strong room temperature electroluminescence with two emission peaks at around 0.786 eV and 0.747 eV from Ge n+/p shallow junctions was reported. The peak at around 0.786 eV comes from direct band luminescence (DBL) in n + Ge regions, while the peak fixing at 0.747 eV is resulted from defects induced by ion implantation. Heavy n-type doping in Ge renders realization of strong defect-related luminescence (DRL) feasible. The peak intensity ratio of DRL/DBL decreases with increase of injection current since more electrons are filled in Γ valley. Above all, the Ge n+/p shallow junction is fully compatible with the source and drain in Ge metal-oxide-semiconductor field effect transistors.
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Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature
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Autor/in / Beteiligte Person: | Jin, Chunyan ; Chen, Songyan ; Wang, Chen ; Huang, Wei ; Lai, Hongkai ; Li, Cheng ; Chen, Chaowen ; Huang, Zhiwei ; Sun, Jiaming ; Lin, Guangyang |
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Zeitschrift: | Applied Physics Letters, Jg. 108 (2016-05-09), S. 191107-191107 |
Veröffentlichung: | AIP Publishing, 2016 |
Medientyp: | unknown |
ISSN: | 1077-3118 (print) ; 0003-6951 (print) |
DOI: | 10.1063/1.4949532 |
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