Synthesis of CIGS absorber layers via a paste coating
In: Journal of Crystal Growth, Jg. 311 (2009-04-01), S. 2621-2625
Online
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Zugriff:
CuIn x Ga 1− x Se 2 (CIGS) thin films were prepared by a paste coating with the aim of developing a simpler and the lower cost method for fabricating the absorber layers of thin film solar cells. In particular, a paste of a Cu, In, Ga, and Se precursor mixture was first prepared, followed by a reaction between them at elevated temperatures after depositing the paste onto a glass substrate. No apparent change in composition was observed during thermal annealing at 450 °C in the absence of a gas-phase selenium source. A pre-annealing process at 250 °C under ambient conditions performed before annealing (450 °C) under reduction conditions reduced the level of carbon deposition in/on the films without perturbing the stoichiometry of the CIGS thin films.
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Synthesis of CIGS absorber layers via a paste coating
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Autor/in / Beteiligte Person: | Yoon, Sungho ; Park, Jong-Won ; Lee, Eunjoo ; Young Woo Choi ; Joo, Oh-Shim ; Byoung Koun Min |
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Zeitschrift: | Journal of Crystal Growth, Jg. 311 (2009-04-01), S. 2621-2625 |
Veröffentlichung: | Elsevier BV, 2009 |
Medientyp: | unknown |
ISSN: | 0022-0248 (print) |
DOI: | 10.1016/j.jcrysgro.2009.02.038 |
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