Study of the influence of the Sb content on the precipitation of As-Sb in LTG-AlGaAsSb
СанкÑ-ÐеÑеÑбÑÑгÑкий полиÑеÑ
ниÑеÑкий ÑнивеÑÑиÑÐµÑ ÐеÑÑа Ðеликого, 2021
Online
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Zugriff:
Рданной ÑабоÑе бÑли иÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð½Ð°Ð½Ð¾Ð²ÐºÐ»ÑÑÐµÐ½Ð¸Ñ Ð² ÑеÑии обÑазÑов LTG-GaAs и LTG-AlGaAs Ñ ÑооÑаждением As и Sb. СÑÑÑкÑÑÑÑ Ð¸ÑÑÐ»ÐµÐ´Ð¾Ð²Ð°Ð½Ñ Ð¼ÐµÑодом пÑоÑвеÑиваÑÑей ÑлекÑÑонной микÑоÑкопии (ÐÐÐ) в попеÑеÑном ÑеÑении обÑазÑа. ÐÑли опÑÐµÐ´ÐµÐ»ÐµÐ½Ñ Ñакие паÑамеÑÑÑ, как ÑазмеÑ, плоÑноÑÑÑ ÑаÑпÑÐµÐ´ÐµÐ»ÐµÐ½Ð¸Ñ Ð¼Ð°ÑÑива вÑделений в Ñлое, Ð¸Ñ Ð¾Ð±ÑÐµÐ¼Ð½Ð°Ñ Ð´Ð¾Ð»Ñ, а Ñакже ÑоÑÑав нановклÑÑений As-Sb. Ð ÑезÑлÑÑаÑе пÑоведеннÑÑ Ð¸ÑÑледований бÑло ÑÑÑановлено, ÑÑо легиÑование ÑÑÑÑмой пÑÐ¸Ð²Ð¾Ð´Ð¸Ñ Ðº ÑвелиÑÐµÐ½Ð¸Ñ ÑазмеÑов нановклÑÑений, ÑÑо вÑзвано влиÑнием изоваленÑного легиÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑÑÑÑмой на Ð·Ð°Ñ Ð²Ð°Ñ Ð¼ÑÑÑÑка пÑи ÑоÑÑе, а Ñакже поÑвление напÑÑжений в пленке из-за ÑаÑÑоглаÑÐ¾Ð²Ð°Ð½Ð¸Ñ ÑеÑеÑок GaAs и Sb. ÐлиÑние Al Ñакже Ñ Ð°ÑакÑеÑизÑеÑÑÑ ÑвелиÑением ÑазмеÑов нановклÑÑений, однако ÑÑо ÑвÑзано Ñ Ð´Ð¸ÑÑÑзионнÑми пÑоÑеÑÑами пÑи пÑеÑипиÑаÑии. Также бÑли пÑоанализиÑÐ¾Ð²Ð°Ð½Ñ ÑпекÑÑÑ Ð¾Ð¿ÑиÑеÑкой ÑкÑÑинкÑии, где аналиÑиÑеÑки обнаÑÑжен ÑезонанÑнÑй пик Ñ ÑнеÑгией 2,4 ÑÐ. ÐÑиÑода Ñдвига пика ÑезонанÑного поглоÑÐµÐ½Ð¸Ñ Ð½Ðµ ÑÑна. ÐбÑÑÑнение ÑÑого ÑвлениÑ, а Ñакже влиÑÐ½Ð¸Ñ Ð½Ð°Ð½Ð¾Ð²ÐºÐ»ÑÑений As-Sb на пÑоÑвление ÑезонанÑа ÑвлÑеÑÑÑ Ð°ÐºÑÑалÑной задаÑей Ð´Ð»Ñ Ð±ÑдÑÑÐ¸Ñ Ð¸ÑÑледований.
In this paper, was studied nanoinclusions in a series of LTG-GaAs and LTGAlGaAs samples with co-precipitation of As and Sb. The structures were studied by transmission electron microscopy (TEM) in the cross-section of the sample. We determined such parameters as the size, density of distribution of the array of precipitates in the layer, their volume fraction, as well as the composition of As-Sb nanoinclusions. As a result of the studies carried out, it was found that doping with antimony leads to an increase in the size of nanoinclusions, which is caused by the effect of isovalent doping with antimony on the capture of arsenic during growth, as well as by the appearance of stresses in the film due to the lattice mismatch between GaAs and Sb. The effect of Al is also characterized by an increase in the size of nanoinclusions; however, it is associated with diffusion processes during precipitation. Was also analyzed the optical extinction spectra, where a resonance peak with an energy of 2.4 eV was analytically detected. The nature of the shift of the resonance absorption peak is not clear; the explanation of this phenomenon, as well as the influence of As-Sb nanoinclusions on the manifestation of resonance, is an urgent task for future studies.
Titel: |
Study of the influence of the Sb content on the precipitation of As-Sb in LTG-AlGaAsSb
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Veröffentlichung: | СанкÑ-ÐеÑеÑбÑÑгÑкий полиÑÐµÑ Ð½Ð¸ÑеÑкий ÑнивеÑÑиÑÐµÑ ÐеÑÑа Ðеликого, 2021 |
Medientyp: | unknown |
DOI: | 10.18720/spbpu/3/2021/vr/vr21-3100 |
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