Design method for fully integrated CMOS RF LNA
In: Electronics Letters, Jg. 40 (2004), S. 1513-1513
Online
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Zugriff:
An efficient method for fully integrated RF CMOS LNA design is presented. A particular input matching topology enables inductor values to be selected in order to be integrated fully and to minimise the input losses. Moreover, an active device sizing method is used to achieve a 50 Ω input impedance with a low noise factor. Simulations show a 3.0 dB noise figure at 2.45 GHz for a power consumption of 10 mW in a 0.28 μm RF CMOS process.
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Design method for fully integrated CMOS RF LNA
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Autor/in / Beteiligte Person: | Bourdel, Sylvain ; Pannier, Philippe ; Gaubert, Jean ; Egels, Matthieu |
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Zeitschrift: | Electronics Letters, Jg. 40 (2004), S. 1513-1513 |
Veröffentlichung: | Institution of Engineering and Technology (IET), 2004 |
Medientyp: | unknown |
ISSN: | 0013-5194 (print) |
DOI: | 10.1049/el:20046396 |
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