Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
In: IEEE Electron Device Letters, Jg. 24 (2003-05-01), S. 339-341
Online
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Zugriff:
Dependence of CMOS performance on silicon crystal orientation of [100], [111], and [110] has been investigated with the equivalent gate dielectric thickness less than 3 nm. Hole mobility enhancement of /spl ges/160% has been observed for both oxynitride and HfO/sub 2/ gate dielectrics on [110] surfaces compared with [100]. CMOS drive current is nearly symmetric on [110] orientation without any degradation of subthreshold slope. For HfO/sub 2/ gate dielectrics, an approximately 68% enhancement of pMOSFET drive current has been demonstrated on [110] substrates at L/sub poly/=0.12 /spl mu/m, while current reduction in nMOS is around 26%.
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Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
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Autor/in / Beteiligte Person: | D'Emic, Christopher P. ; Jamison, Paul C. ; Yang, Min ; Chou, A.I. ; Kozlowski, P. ; Boyd, Diane C. ; Gluschenkov, Oleg ; Sicina, Raymond M. ; Gusev, Evgeni ; Chan, K.K. ; Ieong, Meikei |
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Zeitschrift: | IEEE Electron Device Letters, Jg. 24 (2003-05-01), S. 339-341 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2003 |
Medientyp: | unknown |
ISSN: | 1558-0563 (print) ; 0741-3106 (print) |
DOI: | 10.1109/led.2003.812565 |
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