Si CVV Auger line shapes: tight binding model with inter-atomic phases
In: Journal of Electron Spectroscopy and Related Phenomena, Jg. 82 (1996-11-01), S. 79-85
Online
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Zugriff:
We present the line shape analysis of the Si CVV transitions based on an extended Cini-Sawatzky approach, including overlap effects. We show that introducing an appropriate phase shift between the s and p tight binding basis orbitals of different atoms is essential to achieve agreement with experiment. The physical nature of this phase shift is discussed.
Titel: |
Si CVV Auger line shapes: tight binding model with inter-atomic phases
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Autor/in / Beteiligte Person: | Pernaselci, A. ; Cini, Michele |
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Zeitschrift: | Journal of Electron Spectroscopy and Related Phenomena, Jg. 82 (1996-11-01), S. 79-85 |
Veröffentlichung: | Elsevier BV, 1996 |
Medientyp: | unknown |
ISSN: | 0368-2048 (print) |
DOI: | 10.1016/s0368-2048(96)03039-3 |
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