Tunable CMOS Pseudo-Resistors for Resistances of Hundreds of GΩ
In: IEEE Transactions on Circuits and Systems I: Regular Papers, Jg. 69 (2022-02-01), S. 657-667
Online
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Zugriff:
This paper presents the design of tunable CMOS pseudo-resistors aimed at achieving large and predictable resistance values. Instrumental to the proposed pseudo-resistor is the design of current sources of extremely low currents and transistors operating in subthreshold. The effects of the leakage currents of reverse-biased pn-junctions on the pseudo-resistor resistance are also evaluated. The proposed pseudo-resistor circuit was validated while in use as part of a filter integrated in a 180 nm CMOS process. Pseudo-resistors with resistances between 180 GΩ and 700 GΩ were employed to obtain low-frequency poles of a band-pass filter adjustable from 0.6 Hz to 2 Hz.
| Titel: |
Tunable CMOS Pseudo-Resistors for Resistances of Hundreds of GΩ
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| Autor/in / Beteiligte Person: | Márcio Cherem Schneider ; Bolzan, Evandro ; Thiago Daros Fernandes ; Jeffer Mauricio Rueda-Diaz |
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| Zeitschrift: | IEEE Transactions on Circuits and Systems I: Regular Papers, Jg. 69 (2022-02-01), S. 657-667 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2022 |
| Medientyp: | unknown |
| ISSN: | 1558-0806 (print) ; 1549-8328 (print) |
| DOI: | 10.1109/tcsi.2021.3121214 |
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