MAIN LDE EFFECTS OF DEEP SUBMICRON MOS TRANSISTORS AND APPROACHES TO THEIR CONSIDERATION INTO SPICE MODELS
In: International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis, 2020-09-09
Online
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Zugriff:
A review of the main, in terms of the influence on the electrophysical behavior of the MOS transistor, topology-dependent effects (LDE) was performed. Approaches to development test structures designed for their subsequent measurement, extraction of SPICE parameters and integration the results into a compact model are proposed.
| Titel: |
MAIN LDE EFFECTS OF DEEP SUBMICRON MOS TRANSISTORS AND APPROACHES TO THEIR CONSIDERATION INTO SPICE MODELS
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| Autor/in / Beteiligte Person: | Shipitsin, Dmitriy ; Shemyakin, Aleksandr ; Potupchik, Aleksandr |
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| Zeitschrift: | International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis, 2020-09-09 |
| Veröffentlichung: | LLC MAKS Press, 2020 |
| Medientyp: | unknown |
| DOI: | 10.29003/m1611.silicon-2020/236-239 |
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