Comparison of THz emitters and detectors pumped at 1560 nm: DAST, ErAs:InGaAs and LTG GaAs
In: 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves, 2012-09-01
Online
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Zugriff:
Several options for THz emitters and detectors operated at pump wavelengths around 1560 nm were investigated. Results from photoconductive antennas on In 0.53 Ga 0.47 As-based epilayers as well as DAST crystals are presented. Furthermore, the use of standard LTG GaAs antennas without frequency doubling is explored.
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Comparison of THz emitters and detectors pumped at 1560 nm: DAST, ErAs:InGaAs and LTG GaAs
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Autor/in / Beteiligte Person: | Ospald, Frank ; Ramer, J.-M. ; Beigang, Rene ; Zouaghi, W. |
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Zeitschrift: | 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves, 2012-09-01 |
Veröffentlichung: | IEEE, 2012 |
Medientyp: | unknown |
DOI: | 10.1109/irmmw-thz.2012.6380150 |
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