Low‐power up‐conversion folded CMOS mixer for 2–12 GHz ultra‐wideband applications
In: IET Microwaves, Antennas & Propagation, Jg. 14 (2020-10-22), S. 1975-1982
Online
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Zugriff:
This study presents an ultra-wideband up-conversion mixer chip that operates within the frequency range of 2–12 GHz using TSMC 0.18 μm complementary metal oxide semiconductor (CMOS) technology. The architecture is based on that of a Gilbert cell mixer. The design of the transconductance stage is based on an inverting amplifier. Two series resonant inductors are used to increase the conversion gain of the mixer, and a transformer that consists of two self-made inductors reduces the spatial requirement of the chip. This up-mixer achieves a 12.48 dB conversion gain and features an excellent gain flatness value of ±1.2 dB. The local oscillator (LO)-to-radio-frequency isolation is 44–20 dB, the input third-order intercept point (IIP3) is −6.8 to −8 dBm and the DC power consumption is 5.084 mW for a supply voltage of 1 V. The total size of the chip for the up-mixer is 1.2 × 1.2 mm2, including the pad frames.
| Titel: |
Low‐power up‐conversion folded CMOS mixer for 2–12 GHz ultra‐wideband applications
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| Autor/in / Beteiligte Person: | Qian, Jia-bin ; Chen, Jun-Da |
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| Zeitschrift: | IET Microwaves, Antennas & Propagation, Jg. 14 (2020-10-22), S. 1975-1982 |
| Veröffentlichung: | Institution of Engineering and Technology (IET), 2020 |
| Medientyp: | unknown |
| ISSN: | 1751-8733 (print) ; 1751-8725 (print) |
| DOI: | 10.1049/iet-map.2020.0287 |
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