An Ultra-Low-Power Wideband Inductorless CMOS LNA With Tunable Active Shunt-Feedback
In: IEEE Transactions on Microwave Theory and Techniques, Jg. 64 (2016-06-01), S. 1843-1853
Online
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Zugriff:
This work presents and analyzes the design of a 1-V ultra-low power, compact, and wideband low-noise amplifier (LNA). The proposed LNA uses common-gate (CG) NMOS and PMOS transistors as input devices in a complementary current-reuse structure. Low power input matching is achieved by employing an active shunt-feedback architecture while the current of the feedback stage is also reused by the input transistor to improve the current efficiency of the LNA. A forward body biasing (FBB) scheme is exploited to tune the feedback coefficient. The complementary characteristics of the input stage leads to partial second-order distortion cancellation. The proposed inductorless LNA is implemented in an IBM 0.13- $\mu {\text {m}}~1$ P8M CMOS technology and occupies only $0.0052~{\text {mm}}^{2}$ . The measured LNA has a 12.3-dB gain 4.9-dB minimum noise figure (NF) input referred third-order intercept point (IIP3) of −10 dBm and 0.1–-2.2 GHz bandwidth (BW), while consuming only 400 $\mu {\text {A}}$ from a 1-V supply.
Titel: |
An Ultra-Low-Power Wideband Inductorless CMOS LNA With Tunable Active Shunt-Feedback
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Autor/in / Beteiligte Person: | Allidina, Karim ; Parvizi, Mahdi ; El-Gamal, Mourad N. |
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Zeitschrift: | IEEE Transactions on Microwave Theory and Techniques, Jg. 64 (2016-06-01), S. 1843-1853 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2016 |
Medientyp: | unknown |
ISSN: | 1557-9670 (print) ; 0018-9480 (print) |
DOI: | 10.1109/tmtt.2016.2562003 |
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