A 31 ppm/ $$^{\circ }$$ C Pure CMOS Bandgap Reference by Exploiting Beta-Multiplier
In: Communications in Computer and Information Science ISBN: 9789811359491 VDAT; (2019)
Online
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Zugriff:
Often Bandgap Reference performance limits the SNR of the bio-medical transceiver, hence sensitivity. In this paper, conventional beta multiplier has been explored to design a new low voltage pure CMOS bandgap architecture, which avoids op-amps and resistors, hence very less mismatch and area. Line sensitivity has been improved by adding an extra gain stage in the circuit. The circuit implementation of the proposed technique was done in 65 nm TSMC CMOS technology to generate 460 mV output voltage. The minimum operating voltage of the circuit is 650 mV. Post-layout simulation results are as follows, 31 ppm/\(^{\circ }\)C temperature coefficient against temperature variation of −40\(^{\circ }\) to 125 \(^{\circ }\)C, 0.5% regulation against supply variation of 0.65−1 V and 0.42% PVT variation. Circuit draws 2.3 A current from 650 mV from power-supply. The proposed band gap reference occupies 0.00144 mm\(^{2}\) silicon area.
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A 31 ppm/ $$^{\circ }$$ C Pure CMOS Bandgap Reference by Exploiting Beta-Multiplier
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Autor/in / Beteiligte Person: | Nagulapalli, R. ; Hayatleh, Khaled ; Yassine, Nabil ; B. Naresh Kumar Reddy ; Barker, Steve ; Zourob, S |
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Quelle: | Communications in Computer and Information Science ISBN: 9789811359491 VDAT; (2019) |
Veröffentlichung: | Springer Singapore, 2019 |
Medientyp: | unknown |
DOI: | 10.1007/978-981-13-5950-7_9 |
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