Low-Frequency Noise in a 0.18 μm Mixed-Mode CMOS Technology at Low Temperature
In: AIP Conference Proceedings, 2009
Online
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Zugriff:
We report on the characterization of Low‐Frequency (LF) noise in a commercial dual gate process with 1.8 V (Tox = 3.3 nm) and 3.3 V (Tox = 6.5 nm) MOSFETs at 77 K. The LF noise behavior in various MOSFETs of this process is well described physically by the correlated carrier number—mobility fluctuation model. A simplified compact model, suitable for analog circuit simulation and valid from weak to strong inversion regimes, is presented.We report on the characterization of Low‐Frequency (LF) noise in a commercial dual gate process with 1.8 V (Tox = 3.3 nm) and 3.3 V (Tox = 6.5 nm) MOSFETs at 77 K. The LF noise behavior in various MOSFETs of this process is well described physically by the correlated carrier number—mobility fluctuation model. A simplified compact model, suitable for analog circuit simulation and valid from weak to strong inversion regimes, is presented.
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Low-Frequency Noise in a 0.18 μm Mixed-Mode CMOS Technology at Low Temperature
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Autor/in / Beteiligte Person: | Martin, P. ; Cavelier, M. ; Ghibaudo, G. ; Macucci, Massimo ; Basso, Giovanni |
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Zeitschrift: | AIP Conference Proceedings, 2009 |
Veröffentlichung: | AIP, 2009 |
Medientyp: | unknown |
DOI: | 10.1063/1.3140462 |
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