Memory effects and carrier transport mechanisms of write-once- read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate
In: Applied Physics Letters, Jg. 98 (2011-05-09), S. 193301-193301
Online
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Zugriff:
The memory effects and the carrier transport mechanisms of write-once-read-many-times (WORM) memory devices fabricated using poly(3-hexylthiophene) (P3HT) molecules embedded in a polymethylmethacrylate (PMMA) polymer layer on a flexible substrate were investigated. Current-voltage (I-V) curves at 300 K for Al/P3HT:PMMA/indium-tin-oxide WORM device showed a permanent memory behavior with an ON/OFF ratio of 104. The estimated retention time of the ON state of the WORM device was more than 10 years. The carrier transport mechanisms of the WORM memory devices are described using several models to fit the experimental I-V data.
Titel: |
Memory effects and carrier transport mechanisms of write-once- read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate
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Autor/in / Beteiligte Person: | Tae Whan Kim ; Keun Kab Park ; Jae Hun Jung |
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Zeitschrift: | Applied Physics Letters, Jg. 98 (2011-05-09), S. 193301-193301 |
Veröffentlichung: | AIP Publishing, 2011 |
Medientyp: | unknown |
ISSN: | 1077-3118 (print) ; 0003-6951 (print) |
DOI: | 10.1063/1.3588231 |
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