CMOS Integrated FET-based Detectors for Radiation from 0.7-3.6THz
In: 2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT), 2021-09-13
Online
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Zugriff:
This paper reports on integrated FET-based terahertz detectors operating in discrete frequencies spanning from 0.7-3.6THz. They are fabricated in standard 180nm CMOS process technology, and occupies a 2.7×3.0 mm2 chip area. Based on the Dyakonov and Shur theory, multi-pixel detectors are implemented by strict performance optimization and process compatibility. The simulated results demonstrate a promising application in low-cost terahertz spectrometer and imaging fields.
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CMOS Integrated FET-based Detectors for Radiation from 0.7-3.6THz
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Autor/in / Beteiligte Person: | Liu, Liyuan ; Liu, Jian ; Liu, Min ; Wu, Nanjian |
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Zeitschrift: | 2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT), 2021-09-13 |
Veröffentlichung: | IEEE, 2021 |
Medientyp: | unknown |
DOI: | 10.1109/ucmmt53364.2021.9569939 |
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