Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node
In: IEEE Electron Device Letters, Jg. 34 (2013-06-01), S. 723-725
Online
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Zugriff:
Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ~1.5 × 10-9 Ω· cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge0.3 with a chemical boron-doping density of 2 × 1021/cm3. This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found.
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Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node
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| Autor/in / Beteiligte Person: | Guillorn, M. ; Sleight, Jeffrey W. ; Gonsalves, Jemima ; Lavoie, Christian ; Engelmann, Sebastian ; Koswatta, Siyuranga O. ; Liu, Fei ; Zhang, Zhen ; Newbury, J. ; Baraskar, Ashish ; Solomon, Paul M. ; Pyzyna, A. ; Zhu, Yu ; Song, Wei ; Cabral, Cyril ; Bedell, S. W. ; Lofaro, Michael F. ; Hopstaken, Marinus ; Yang, Li ; Raymond, Mark ; Rodbell, Kenneth P. ; Ozcan, Ahmet S. ; Witt, C. |
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| Zeitschrift: | IEEE Electron Device Letters, Jg. 34 (2013-06-01), S. 723-725 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2013 |
| Medientyp: | unknown |
| ISSN: | 1558-0563 (print) ; 0741-3106 (print) |
| DOI: | 10.1109/led.2013.2257664 |
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