Epitaxial growth and characterization of non-polara-plane AlGaN films with MgN/AlGaN insertion layers
In: Journal of Physics: Conference Series, Jg. 844 (2017-06-01), S. 012003-12003
Online
unknown
Zugriff:
MgN/AlGaN insertion layers were applied for the first time to the growth of nonpolar a-plane AlGaN epilayers by metal organic chemical vapor deposition technology. The full width at half maximum of the X-ray rocking curve for the a-plane AlGaN epilayers was reduced by approximately 50.6% and the root-mean-square roughness value of the surface was reduced by 74% by applying the MgN/AlGaN insertion layers with an optimized number of insertion pairs. These results reveal that the compressive strain within the a-plane AlGaN epilayers was effectively reduced, leading to significant improvements in crystalline quality and surface morphology. These improvements are very helpful in fabricating high-quality AlGaN-based ultraviolet light-emitting diodes.
| Titel: |
Epitaxial growth and characterization of non-polara-plane AlGaN films with MgN/AlGaN insertion layers
|
|---|---|
| Autor/in / Beteiligte Person: | Zhang, Xiong ; Hu, Guohua ; Wang, Nan ; Zhao, Jianguo ; Wu, Zili ; Wang, Shuchang ; Cui, Yiping ; Dai, Qian ; Zhang, Heng |
| Link: | |
| Zeitschrift: | Journal of Physics: Conference Series, Jg. 844 (2017-06-01), S. 012003-12003 |
| Veröffentlichung: | IOP Publishing, 2017 |
| Medientyp: | unknown |
| ISSN: | 1742-6596 (print) ; 1742-6588 (print) |
| DOI: | 10.1088/1742-6596/844/1/012003 |
| Schlagwort: |
|
| Sonstiges: |
|