A Three-Stage Charge Pump With Forward Body Biasing in 28 nm UTBB FD-SOI CMOS
In: IEEE Transactions on Circuits and Systems I: Regular Papers, Jg. 68 (2021-11-01), S. 4810-4819
Online
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Zugriff:
Energy harvesting techniques provide solutions for powering battery-free circuits or even for charging storage elements such as batteries or super capacitors. In this paper a self-starting switched-capacitor approach based on three-stage charge pump that is appropriate to thermoelectric and photo-voltaic energy harvesting, is carried out in a 28 nm ultra-thin buried oxide (UTBB) fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. By taking advantage of the FD-SOI substrate characteristics, the forward-body-biasing (FBB) technique is applied in order to improve switch conductances. In addition, a sizing exploration of standard N-type and flipped-well P-type devices operating as switches is advanced, in order to provide optimum balance between their conductances. Extensive simulation results validate the proper operation of the charge pump at a minimum input voltage of 150 mV, and show a maximum efficiency peak of 63.3% at an input voltage of 350 mV and load a current of 500 nA.
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A Three-Stage Charge Pump With Forward Body Biasing in 28 nm UTBB FD-SOI CMOS
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Autor/in / Beteiligte Person: | Petraglia, A. ; Pinheiro, Carlos A. ; Olivera, Fabian |
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Zeitschrift: | IEEE Transactions on Circuits and Systems I: Regular Papers, Jg. 68 (2021-11-01), S. 4810-4819 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2021 |
Medientyp: | unknown |
ISSN: | 1558-0806 (print) ; 1549-8328 (print) |
DOI: | 10.1109/tcsi.2021.3112993 |
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