Properties of barium ferrite sputtered films
In: Sensors and Actuators A: Physical, Jg. 113 (2004-08-01), S. 382-386
Online
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Zugriff:
Ferrites have magnetic properties suitable for electronic applications, especially in the microwave range (circulators and isolators). Hexagonal ferrite, such as barium ferrite (BaFe12O19 or BaM), are of great interest for microwave device applications because of their large resistivity and high permeability at high frequencies. BaM films, 1–10 μm thick, were deposited under optimized conditions by RF magnetron sputtering on alumina and silicon substrates. After deposition, films were amorphous and needed a post-deposition annealing at 800 °C to crystallize and to present magnetic properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) results showed that BaM films deposited on alumina and silicon substrates presented a good crystallization, a smooth surface and no cracks. Ba, Fe and O depth profiles obtained by secondary ion mass spectroscopy (SIMS) showed that the films have a good in-depth uniformity. The film residual stress was evaluated using curvature measurements. Whatever the substrate type, the films are in compression after deposition. Upon annealing and crystallization, a tensile stress adds up in relation with crystalline arrangements. Finally, regarding the magnetic properties measured using a vibrating sample magnetometer (VSM), the optimized saturation magnetization of such films reached 500 mT and the coercive force 325 kA/m. These values are close to that of the bulk BaM.
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Properties of barium ferrite sputtered films
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Autor/in / Beteiligte Person: | M. Le Berre ; Bayard, Bernard ; Capraro, S. ; Barbier, D. ; Joisten, H. ; Chatelon, J.P. ; Mery, E. ; Jean Jacques Rousseau ; Dispositifs et Instrumentation en Optoélectronique et micro-ondes (DIOM) ; Université Jean Monnet [Saint-Étienne] (UJM) ; Laboratoire de physique de la matière (LPM) ; Institut National des Sciences Appliquées de Lyon (INSA Lyon) ; Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS) ; Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) ; Direction de Recherche Technologique (CEA) (DRT (CEA)) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) ; Université Jean Monnet - Saint-Étienne (UJM) ; Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) |
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Zeitschrift: | Sensors and Actuators A: Physical, Jg. 113 (2004-08-01), S. 382-386 |
Veröffentlichung: | Elsevier BV, 2004 |
Medientyp: | unknown |
ISSN: | 0924-4247 (print) ; 1873-3069 (print) |
DOI: | 10.1016/j.sna.2004.01.016 |
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