Performance Improvement versus CPW and Loss Distribution Analysis of Slow-wave CPW in 65 nm HR-SOI CMOS Technology
In: IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, 2013, 59 (5), pp.1279-1285. ⟨10.1109/TED.2012.2186969⟩ IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 59 (5), pp.1279-1285. ⟨10.1109/TED.2012.2186969⟩; (2013-05-01)
Online
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Zugriff:
International audience; High-performance integrated slow-wave coplanar waveguides (S-CPW) are compared with conventional coplanar waveguides (CPW) fabricated in a 65-nm High-Resistivity-SOI (HR-SOI) CMOS technology. As expected, S-CPW demonstrates better performance at millimeter-wave frequencies in term of higher effective dielectric permittivity, which is due to the patterned floating shield inserted between the transmission line and the substrate. In addition, S-CPW shows a lower attenuation constant despite of the added metallic patterned floating shield on HR substrate. For demonstration purpose, both low- and high- characteristic impedance S-CPW and CPW are characterized. For 28-Ω S-CPW and 65-Ω S-CPW, the effective dielectric permittivity is improved by a factor of 6 and 2, respectively. Meanwhile, attenuation constants of slow-wave structures are lower than 0.9 dB/mm and 0.57 dB/mm at 60 GHz, compared to CPW ones which are as high as 1.5 dB/mm and 0.95 dB/mm, respectively. Furthermore, the loss distribution for the S-CPW structure is detailed by varying the patterned floating shield length for both standard Bulk and HR-SOI substrates.
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Performance Improvement versus CPW and Loss Distribution Analysis of Slow-wave CPW in 65 nm HR-SOI CMOS Technology
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| Autor/in / Beteiligte Person: | Siligaris, Alexandre ; Ferrari, Philippe ; Tang, Xiao-Lan ; Fournier, Jean-Michel ; Franc, A-L ; Pistono, Emmanuel ; Vincent, P. ; Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS) ; Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) ; Direction de Recherche Technologique (CEA) (DRT (CEA)) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) ; Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE) ; Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS) ; Centre National de la Recherche Scientifique (CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Pierre et Marie Curie - Paris 6 (UPMC) |
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| Quelle: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, 2013, 59 (5), pp.1279-1285. ⟨10.1109/TED.2012.2186969⟩ IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 59 (5), pp.1279-1285. ⟨10.1109/TED.2012.2186969⟩; (2013-05-01) |
| Veröffentlichung: | HAL CCSD, 2013 |
| Medientyp: | unknown |
| ISSN: | 0018-9383 (print) |
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