Pinned Photodiode CMOS Image Sensor TCAD Simulation: In-Depth Analysis of in-Pixel Pinning Voltage Measurement for a Diagnostic Tool
In: IEEE Transactions on Electron Devices, Jg. 64 (2017-02-01), S. 455-462
Online
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Zugriff:
TCAD simulations are conducted on a pinned photodiode (PPD), with the aim to reproduce the pinning voltage measurement developed by Tan \textit{et al}. A thermionic model is proposed and detailed in order to explain the exponential injection occurring at an injection voltage higher than the pinning voltage, and the correct method to extract the transfer gate inversion voltage is given. Then, various non idealities are simulated, such as doping variations or doping layer shifts, the goal being to get a PPD diagnostic tool based on the pinning voltage measurement. Finally, the pinned photodiode is simulated in a real reading mode, and a charge partition mechanism is demonstrated in specific conditions.
| Titel: |
Pinned Photodiode CMOS Image Sensor TCAD Simulation: In-Depth Analysis of in-Pixel Pinning Voltage Measurement for a Diagnostic Tool
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| Autor/in / Beteiligte Person: | Magnan, Pierre ; Nallet, Franck ; Goiffon, Vincent ; Marcelot, Olivier ; Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) ; (SUISSE), Synopsys |
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| Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 64 (2017-02-01), S. 455-462 |
| Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2017 |
| Medientyp: | unknown |
| ISSN: | 1557-9646 (print) ; 0018-9383 (print) |
| DOI: | 10.1109/ted.2016.2634601 |
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