Lasing in direct-bandgap GeSn alloy grown on Si
In: Nature Photonics, 9 (2) NATURE PHOTONICS; (2015-02-01)
Online
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Zugriff:
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently1, because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To overcome this drawback, several routes have been pursued, such as the all-optical Si Raman laser2 and the heterogeneous integration of direct-bandgap III–V lasers on Si3,4,5,6,7. Here, we report lasing in a direct-bandgap group IV system created by alloying Ge with Sn8 without mechanically introducing strain9,10. Strong enhancement of photoluminescence emerging from the direct transition with decreasing temperature is the signature of a fundamental direct-bandgap semiconductor. For T ≤ 90 K, the observation of a threshold in emitted intensity with increasing incident optical power, together with strong linewidth narrowing and a consistent longitudinal cavity mode pattern, highlight unambiguous laser action11. Direct-bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and complementary metal–oxide–semiconductor (CMOS) technology. ISSN:1749-4885 ISSN:1749-4893
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Lasing in direct-bandgap GeSn alloy grown on Si
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Autor/in / Beteiligte Person: | Faist, Jérôme ; Buca, Dan ; Wirths, Stephan ; Geiger, R. ; Stoica, Toma ; Mussler, Gregor ; Luysberg, Martina ; Grützmacher, Detlev ; Sigg, Hans ; Chiussi, Stefano ; Mantl, Siegfried ; N. von den Driesch ; Ikonic, Zoran ; Hartmann, J. M. |
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Quelle: | Nature Photonics, 9 (2) NATURE PHOTONICS; (2015-02-01) |
Veröffentlichung: | Nature Publishing Group, 2015 |
Medientyp: | unknown |
ISSN: | 1749-4885 (print) |
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