Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
In: Nature Communications Nature Communications, Jg. 8 (2017), Heft 1, S. 1-10
Online
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Zugriff:
CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si[subscript 7]N[subscript 3], that possesses a high Kerr nonlinearity (2.8 × 10[superscript −13] cm[superscript 2] W[superscript −1]), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform.
Singapore Ministry of Education. Academic Research Fund (AcRF) Tier 2 grant
Singapore. Agency for Science, Technology and Research (PSF grant)
SUTD-MIT International Design Centre (IDC)
Temasek Laboratories
National Research Foundation of Singapore (Medium Sized Centre Program)
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Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge
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Autor/in / Beteiligte Person: | Lay Kee Ang ; Wang, Ting ; Tan, Dawn T. H. ; Ng, Shengyong ; Wang, Q. ; Kimerling, L. C. ; Ooi, Kelvin J. A. ; Ng, Doris K. T. ; Chee, A. K. L. ; Agarwal, Anuradha M. ; Massachusetts Institute of Technology. Materials Processing Center ; Massachusetts Institute of Technology. Department of Materials Science and Engineering ; Massachusetts Institute of Technology. Microphotonics Center ; Agarwal, Anuradha ; Kimerling, Lionel C |
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Zeitschrift: | Nature Communications Nature Communications, Jg. 8 (2017), Heft 1, S. 1-10 |
Veröffentlichung: | Nature Publishing Group, 2017 |
Medientyp: | unknown |
ISSN: | 2041-1723 (print) |
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