A CMOS silicon spin qubit
In: Nature Communications, Jg. 7 (2016), Heft 1, S. 1-6
Online
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Zugriff:
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal–oxide–semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.
Silicon is a promising material for realization of quantum processors, particularly as it could be naturally integrated with classical control hardware based on CMOS technology. Here the authors report a silicon qubit device made with an industry-standard fabrication process on a CMOS platform.
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A CMOS silicon spin qubit
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Autor/in / Beteiligte Person: | S. De Franceschi ; Hutin, Louis ; Bohuslavskyi, H. ; Jehl, Xavier ; Lavieville, R. ; Maurand, Romain ; Barraud, Sylvain ; Vinet, Maud ; Corna, Andrea ; Kotekar-Patil, Dharmraj ; Sanquer, Marc ; Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS) ; PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS) ; Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG) ; Direction de Recherche Fondamentale (CEA) (DRF (CEA)) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) ; Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) ; Direction de Recherche Technologique (CEA) (DRT (CEA)) ; European Project: 1323160(2013) |
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Zeitschrift: | Nature Communications, Jg. 7 (2016), Heft 1, S. 1-6 |
Veröffentlichung: | HAL CCSD, 2016 |
Medientyp: | unknown |
ISSN: | 2041-1723 (print) |
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