Surface properties of AlInGaN/GaN heterostructure
In: Materials Science in Semiconductor Processing, Jg. 55 (2016-11-01), S. 26-31
Online
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Zugriff:
Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10–11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied.
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Surface properties of AlInGaN/GaN heterostructure
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Autor/in / Beteiligte Person: | Kneissl, Michael ; Heuken, Michael ; Cavalcoli, Daniela ; Vogt, Patrick ; Minj, Albert ; Giesen, C. ; Cros, Ana ; Skuridina, D. ; Minj, A ; Cavalcoli, D. ; Cros, A. ; Vogt, P. ; Kneissl, M. ; Heuken, M. |
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Zeitschrift: | Materials Science in Semiconductor Processing, Jg. 55 (2016-11-01), S. 26-31 |
Veröffentlichung: | Elsevier BV, 2016 |
Medientyp: | unknown |
ISSN: | 1369-8001 (print) |
DOI: | 10.1016/j.mssp.2016.04.005 |
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