Nanometre-scale electronics with III–V compound semiconductors
In: Nature, Jg. 479 (2011-11-01), S. 317-323
Online
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Zugriff:
For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal-oxide-semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III-V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.
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Nanometre-scale electronics with III–V compound semiconductors
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Autor/in / Beteiligte Person: | Jesus A. del Alamo |
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Zeitschrift: | Nature, Jg. 479 (2011-11-01), S. 317-323 |
Veröffentlichung: | Springer Science and Business Media LLC, 2011 |
Medientyp: | unknown |
ISSN: | 1476-4687 (print) ; 0028-0836 (print) |
DOI: | 10.1038/nature10677 |
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