Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane
In: Electronic Materials, Jg. 3 (2022-01-10), S. 27-40
Online
unknown
Zugriff:
Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850◦C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited≥750 °C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 °C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.
Titel: |
Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane
|
---|---|
Autor/in / Beteiligte Person: | Kaloyeros, Alain E. ; Goff, Jonathan ; Arkles, Barry |
Link: | |
Zeitschrift: | Electronic Materials, Jg. 3 (2022-01-10), S. 27-40 |
Veröffentlichung: | MDPI AG, 2022 |
Medientyp: | unknown |
ISSN: | 2673-3978 (print) |
DOI: | 10.3390/electronicmat3010003 |
Schlagwort: |
|
Sonstiges: |
|