Influence of Growth Temperature and Carrier Flux on the Structure and Transport Properties of Highly Oriented CrO2 on Al2O3 (0001)
In: Chemical Vapor Deposition, Jg. 13 (2007-10-01), S. 537-545
Online
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Zugriff:
In this work we report on the structure and magnetic and electrical transport properties of CrO2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 °C, and oxygen carrier gas flow rates of 50–500 sccm, showing that it is viable to grow highly oriented a-axis CrO2 films at temperatures as low as 330 °C i.e., 60–70 °C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass-transport mechanisms are identified. The growth of a Cr2O3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 °C keep the same high quality magnetic and transport properties as those deposited at higher temperatures.
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Influence of Growth Temperature and Carrier Flux on the Structure and Transport Properties of Highly Oriented CrO2 on Al2O3 (0001)
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Autor/in / Beteiligte Person: | Yates, Karen A. ; António Jorge Silvestre ; Dias, Sonia A. ; Sousa, Pedro ; Conde, O. ; Branford, Will R. ; Morris, B. ; Cohen, Lesley F. |
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Zeitschrift: | Chemical Vapor Deposition, Jg. 13 (2007-10-01), S. 537-545 |
Veröffentlichung: | Wiley, 2007 |
Medientyp: | unknown |
ISSN: | 1521-3862 (print) ; 0948-1907 (print) |
DOI: | 10.1002/cvde.200706592 |
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