Monolithic integration of GMR sensors for standard CMOS-IC current sensing
In: Solid-State Electronics, Jg. 135 (2017-09-01), S. 100-104
Online
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Zugriff:
In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a detection sensitivity of about 100 Hz/mA, with a resolution of about 5 μA.
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Monolithic integration of GMR sensors for standard CMOS-IC current sensing
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Autor/in / Beteiligte Person: | A. De Marcellis ; Freitas, Paulo P. ; Reig, Candid ; Santos, Joana L. ; Cardoso, Susana ; Cubells-Beltran, M.D. ; Madrenas, Jordi |
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Zeitschrift: | Solid-State Electronics, Jg. 135 (2017-09-01), S. 100-104 |
Veröffentlichung: | Elsevier BV, 2017 |
Medientyp: | unknown |
ISSN: | 0038-1101 (print) |
DOI: | 10.1016/j.sse.2017.06.034 |
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