A fully integrated 2.4 dB NF capacitive cross coupling CG-LNA for LTE band
In: Analog Integrated Circuits and Signal Processing, Jg. 99 (2019-01-24), S. 159-166
Online
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Zugriff:
WOS: 000460681500015 This paper presents a common gate low noise amplifier utilizing a passive feedback network that provides a competitive and highly integrated front-end solution for mobile handset devices. This design utilizes a resistive load instead of the inductive one used in other designs to reduce the on-chip silicon area. The design does not need an external matching network which decrease the area of the PCB while achieving a sufficient input impedance matching, S-11. It achieves a measured gain higher than 20dB, noise figure less than 3dB and input referred third order intercept point (IIP3) value higher than-2.5 dBm at 2.3GHz. The design is implemented in 65nm UMC CMOS technology, occupies a total area of 0.065mm(2) and consumes 5mW from a 1.4V supply. TUBİTAK [113E201] This work was supported by Tubitak Grant 113E201.
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A fully integrated 2.4 dB NF capacitive cross coupling CG-LNA for LTE band
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Autor/in / Beteiligte Person: | Mehmet Tamer Ozgun ; Dogan, Hakan ; Abdelhamid, Amr A. |
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Zeitschrift: | Analog Integrated Circuits and Signal Processing, Jg. 99 (2019-01-24), S. 159-166 |
Veröffentlichung: | Springer Science and Business Media LLC, 2019 |
Medientyp: | unknown |
ISSN: | 1573-1979 (print) ; 0925-1030 (print) |
DOI: | 10.1007/s10470-019-01399-w |
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