Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology
In: Semiconductor Physics, Quantum Electronics & Optoelectronics, Jg. 21 (2018), Heft 3, S. 282-287
Online
unknown
Zugriff:
In spite of the fact that, a great deal of experimental research has been published, there is a lack of good understanding of silicon nanowires growth to exert control over important properties of the system, though it presents the simplest system like gold on silicon substrate. In the current research, to find the best conditions to grow silicon nanowires with prespecified properties, we studied various technological regimes both of growth-seed formation and conditions of silicon nanowires growth.
| Titel: |
Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology
|
|---|---|
| Autor/in / Beteiligte Person: | Klimovskaya, A.I. ; Kalashnyk, Yu.Yu. ; Voroshchenko, A.T. ; Oberemok, O.S. ; Pedchenko, Yu.M. ; Lytvyn, P.M. |
| Link: | |
| Zeitschrift: | Semiconductor Physics, Quantum Electronics & Optoelectronics, Jg. 21 (2018), Heft 3, S. 282-287 |
| Veröffentlichung: | National Academy of Sciences of Ukraine. Institute of Semi conductor physics., 2018 |
| Medientyp: | unknown |
| ISSN: | 1605-6582 (print) ; 1560-8034 (print) |
| Schlagwort: |
|
| Sonstiges: |
|