Melt Blown Fiber-Assisted Solvent-Free Device Fabrication at Low-Temperature
In: Micromachines, Jg. 11 (2020-11-30), Heft 12
Online
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Zugriff:
In this paper, we propose a solvent-free device fabrication method using a melt-blown (MB) fiber to minimize potential chemical and thermal damages to transition-metal-dichalcogenides (TMDCs)-based semiconductor channel. The fabrication process is composed of three steps
(1) MB fibers alignment as a shadow mask, (2) metal deposition, and (3) lifting-up MB fibers. The resulting WSe2-based p-type metal-oxide-semiconductor (PMOS) device shows an ON/OFF current ratio of ~2 ×
105 (ON current of ~&minus
40 µ
A) and a remarkable linear hole mobility of ~205 cm2/V·
s at a drain voltage of &minus
0.1 V. These results can be a strong evidence supporting that this MB fiber-assisted device fabrication can effectively suppress materials damage by minimizing chemical and thermal exposures. Followed by an MoS2-based n-type MOS (NMOS) device demonstration, a complementary MOS (CMOS) inverter circuit application was successfully implemented, consisted of an MoS2 NMOS and a WSe2 PMOS as a load and a driver transistor, respectively. This MB fiber-based device fabrication can be a promising method for future electronics based on chemically reactive or thermally vulnerable materials.
Titel: |
Melt Blown Fiber-Assisted Solvent-Free Device Fabrication at Low-Temperature
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Autor/in / Beteiligte Person: | Young Tack Lee ; Lee, Minjong ; Kang, Joohoon |
Link: | |
Zeitschrift: | Micromachines, Jg. 11 (2020-11-30), Heft 12 |
Veröffentlichung: | 2020 |
Medientyp: | unknown |
ISSN: | 2072-666X (print) |
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