CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform
In: Scientific Reports, 2015-06-18
Online
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Zugriff:
Progress on the fabrication of ultrahigh-Q photonic-crystal nanocavities (PhC-NCs) has revealed the prospect for new applications including silicon Raman lasers that require a strong confinement of light. Among various PhC-NCs, the highest Q has been recorded with silicon. On the other hand, microcavity is one of the basic building blocks in silicon photonics. However, the fusion between PhC-NCs and silicon photonics has yet to be exploited, since PhC-NCs are usually fabricated with electron-beam lithography and require an air-bridge structure. Here we show that a 2D-PhC-NC fabricated with deep-UV photolithography on a silica-clad silicon-on-insulator (SOI) structure will exhibit a high-Q of 2.2 × 105 with a mode-volume of ~1.7(λ/n)3. This is the highest Q demonstrated with photolithography. We also show that this device exhibits an efficient thermal diffusion and enables high-speed switching. The demonstration of the photolithographic fabrication of high-Q silica-clad PhC-NCs will open possibility for mass-manufacturing and boost the fusion between silicon photonics and CMOS devices.
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CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform
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Autor/in / Beteiligte Person: | Tetsumoto, Tomohiro ; Yoshiki, Wataru ; Fushimi, Akihiro ; Tanabe, Takasumi ; Ooka, Yuta |
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Zeitschrift: | Scientific Reports, 2015-06-18 |
Veröffentlichung: | Nature Publishing Group, 2015 |
Medientyp: | unknown |
ISSN: | 2045-2322 (print) |
DOI: | 10.1038/srep11312 |
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