Investigation of crystallization behavior of CIG-Se bi-layer thin films
In: Journal of nanoscience and nanotechnology, Jg. 12 (2012-08-02), Heft 4
Online
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Zugriff:
Copper indium gallium diselenide (CIGSe) thin film was fabricated via a thermal treatment of GIG-Se bi-layer thin films. A CIG layer was prepared first, by a chemical solution deposition (CSD) process. The Se layer was deposited separately on the CIG layer by evaporation. The GIG-Se bi-layer then underwent a thermal treatment to cause a reaction between the two layers. In order to investigate the mechanism of CIG-Se bi-layer crystallization, the thermal treatment temperature was varied. The properties of the prepared CIGSe2 thin films were analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometry (EDS), and UV-visible spectrophotometry.
Titel: |
Investigation of crystallization behavior of CIG-Se bi-layer thin films
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Autor/in / Beteiligte Person: | Kang, Jin-Kyu ; Kim, Dae-Hwan ; Mi Sun Park ; Sung, Shi-Joon |
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Zeitschrift: | Journal of nanoscience and nanotechnology, Jg. 12 (2012-08-02), Heft 4 |
Veröffentlichung: | 2012 |
Medientyp: | unknown |
ISSN: | 1533-4880 (print) |
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