Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells (II-CQWs)
In: Thin Solid Films, Jg. 294 (1997-02-01), S. 336-339
Online
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Zugriff:
Anomalies have been observed in photoluminescence (PL) of pure-Ge/Si type-II coupled quantum wells (II-CQWs). Although the II-CQWs (LGe=1.5 ML) showed clear energy red-shift with decreasing Si spacer thickness (LSi) due to interwell coupling of the hole wave-function, an anomalous energy lowering was observed for smaller LSi (≤6 A). Moreover, PL intensity of the II-CQWs increased linearly with increasing excitation power, as opposed to a sublinear increase in type-II QWs due to exciton localization at the interfaces. These results seem to be the result of enhanced electron capture by the II-CQW potential profile. Furthermore, correlation of thickness fluctuation among the layers was observed by high-resolution transmission electron microscopy, which may be connected to the PL anomalies.
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Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells (II-CQWs)
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Autor/in / Beteiligte Person: | Shiraki, Yasuhiro ; Usami, Noritaka ; Sunamura, H. ; Fukatsu, Susumu |
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Zeitschrift: | Thin Solid Films, Jg. 294 (1997-02-01), S. 336-339 |
Veröffentlichung: | Elsevier BV, 1997 |
Medientyp: | unknown |
ISSN: | 0040-6090 (print) |
DOI: | 10.1016/s0040-6090(96)09292-9 |
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