Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2020, Singapour, Singapore. pp.1-6, ⟨10.1109/IPFA49335.2020.9260793⟩; (2020-07-20)
Online
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Zugriff:
International audience; Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in the nine device groups, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may correspond to dislocations and act as preferential paths for electron trapping. Degradation is therefore preliminary attributed to hot-electron trapping, enhanced by electric fields.
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Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
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| Autor/in / Beteiligte Person: | Rampazzo, Fabiana ; Zanoni, Enrico ; Meneghesso, Gaudenzio ; Gao, Z. ; Kabouche, Riad ; Medjdoub, Farid ; Harrouche, Kathia ; Meneghini, Matteo ; Carlo De Santi ; Chiocchetta, F. ; Okada, Etienne ; Department of Information Engineering [Padova] (DEI) ; Universita degli Studi di Padova ; Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) ; Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN) ; Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) ; PCMP, CHOP ; Università degli Studi di Padova = University of Padua (Unipd) ; Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) ; Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) ; Université catholique de Lille (UCL)-Université catholique de Lille (UCL) |
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| Quelle: | 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2020, Singapour, Singapore. pp.1-6, ⟨10.1109/IPFA49335.2020.9260793⟩; (2020-07-20) |
| Veröffentlichung: | HAL CCSD, 2020 |
| Medientyp: | unknown |
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