28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K
In: IEEE Journal of the Electron Devices Society, Jg. 8 (2020), S. 646-654
Online
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Zugriff:
This work presents a detailed RF characterization of 28-nm FD-SOI nMOSFETs at cryogenic temperatures down to 4.2 K. Two main RF Figures of Merit (FoMs), i.e., current-gain cutoff frequency (ft) and maximum oscillation frequency (fmax), as well as parasitic elements of the small-signal equivalent circuit, are extracted from the measured S-parameters. An improvement of up to ~130 GHz in ft and ~75 GHz in fmax is observed for the shortest device (25 nm) at low temperature. The behavior of RF FoMs versus temperature is discussed in terms of small-signal equivalent circuit elements, both intrinsic and extrinsic (parasitics). This study suggests 28-nm FD-SOI nMOSFETs as a good candidate for future cryogenic applications down to 4.2 K and clarifies the origin and limitations of the performance.
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28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K
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Autor/in / Beteiligte Person: | Nyssens, Lucas ; Planes, Nicolas ; Raskin, Jean-Pierre ; Babak Kazemi Esfeh ; Flandre, Denis ; Kilchytska, Valeriya ; Halder, Arka ; UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
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Zeitschrift: | IEEE Journal of the Electron Devices Society, Jg. 8 (2020), S. 646-654 |
Veröffentlichung: | IEEE, 2020 |
Medientyp: | unknown |
ISSN: | 2168-6734 (print) |
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