With the continuous intelligentization of power systems, the demand for the integration of digital chips and sensor chips such as the Internet of Things is also increasing. A CMOS lineal magnetic Hall sensor front-end working in current mode with programmable gain stage is designed and implemented with SMIC 55 nm standard CMOS technology. By using a spinning-current technique, chopper technique, and digital calibration technique to eliminate the offset voltage and nonlinearity, this magnetic Hall sensor can be easily integrated into digital systems like SoCs. This work has already finished the circuit simulation and layout design, and all simulation indicators basically reach the expected value. The maximum gain of proposed sensor systems can be up to 33.9 dB. The total power is less than 4 mW. And the total area is less than 0.113 μm2. The magnetic Hall sensor can be easily integrated into chips such as the power Internet of Things to form a single-chip-level SoC design, which is mainly used in applications such as circuit breakers and electric energy measurement.
With the rapid development of very large-scale integrated circuits, various new types of equipment and various digital chips used in power grids and related digital-analog hybrid sensor chips are also emerging. Commonly used special control chips for power Internet of Things generally have an integration level only to the digital-analog/analog-to-digital converter level, and the corresponding sensor part still needs to be connected to an off-chip chip. Considering the realization of the overall function of the system and the realization of sufficient performance at a relatively low cost, SoC (System on Chip) design has gradually become the mainstream. On the premise of meeting standard CMOS silicon process manufacturing, many of the off-chip sensor circuit parts have already been integrated into the SoC to form a single-chip-level design. Hall sensor is one of which is easy to integrate with standard CMOS process. As a part of the special chip for the power Internet of Things, it can measure the current inside the line without contact by measuring the magnetic induction near the power line, which can be applied to various occasions such as circuit breakers and energy measurement.
Hall sensors are widely used in automotive and industrial applications such as current measurement, angle detection, and position detection. Hall sensors are preferred because of their low cost, low power, wide range, high sensitiveness, and great compatibility to standard CMOS. As the sensors are not fabricated in dedicated technology, they also suffer from sensitivity drift and offset in Hall plate. Usually, offset can be eliminated by spinning-current and chopper techniques. The sensitivity drift can be compensated by a look-up table, analog compensation technique, or digital calibration technique. The look-up table is the simplest way for sensitivity drift compensation, but the performance is poor. The analog compensation technique can have better performance but leads to higher complexity and implementation cost. The digital calibration technique is preferred because it outperforms the look-up table and it is easy to implement in a digital domain with an elaborately designed calibration algorithm.
The main structure of the proposed Hall sensor system is presented in Figure 1. It consists of a Hall core, a current mirror and its bias, two stages of a differential amplifier, a chopper circuit, and a clock generator.
Graph: Figure 1 Main structure of Hall sensor front-end.
In this design, the Hall device is biased by a pair of current mirrors to produce a pair of differential Hall voltage. The differential Hall voltage is amplified by a differential amplifier Amp1 with constant gain. Then, the output of Amp1 goes through the chopper circuit to eliminate the offset voltage of the Hall plate. After the amplification of Amp2 with programmable gain, the final output is sampled and measured by a 16-bit 1MSps ADC, then processed in a digital domain. The clock generator produces different clocks for the Hall core to realize the spinning-current technique and for chopper to reduce Hall offset voltage. The detail of each block will be discussed below.
The Hall core is biased with 100 μA constant current to produce a stable Hall voltage. To get lower common-mode voltage of Hall voltage, a pair of current mirrors is implemented separately by PMOS and NMOS using a wide swing cascade structure. Figure 2 shows the details of current mirrors where nodes vbp4 to vbn1 come from Vbias circuit.
Graph: Figure 2 A pair of wide swing cascade current mirrors.
The Vbias circuit provides nodes from vbp4 to vnb1 for current mirrors. That is, it is basically a constant-Gm structure which can provide satisfying immunity to power supply [[
The Hall core consists of a Hall device or so-called Hall plate and 8 switches. The Hall device is implemented with an N-type semiconductor, to be more explicit, the N-well region. Figure 3 demonstrates the typical geometry of the Hall device. Common types of Hall plate include rectangle, bridge, and cross. In this design, a cross type is chosen, and a P+ region is added on the top of N-well to get rid of the effect from the upper circuit.
Graph: Figure 3 An N-well Hall device with geometry of 8 μm.
Figure 4 shows a Hall plate model for circuit simulation. And its basic framework still adopts the most basic Wheatstone bridge structure [[
Graph: Figure 4 Simulation model of Hall device.
To eliminate the Hall offset voltage introduced by geometry asymmetry, we employ the spinning-current technique in the Hall core circuit by using 8 switches [[
Graph: Figure 5 Structure of Hall core using spinning-current.
In the first phase, the bias current flows from node na to node nc; thus, differential Hall voltage
In the second phase, the bias current flows from node nb to node nd; thus, differential Hall voltage
If the switching frequency of the current direction is far greater than the change frequency of the magnetic field, then the magnetic field is approximately unchanged in these two phases. By subtracting the voltage obtained from these two phases, the differential Hall voltage becomes
Using the rotating current technology with
The Hall effect is very weak. And the output Hall voltage of the modulation module is very small, which is in the order of μV~mV. Therefore, it must be amplified before demodulation. The differential amplifier consists of two single-ended operational amplifiers and several resistances. Since the output signal of the Hall disk is weak, the first stage of the gain adjustable amplifier needs low noise and high input impedance. For Amp1, a two-stage folded-cascode optional amplifier with Miller compensated is used in this design. For Amp2, three switches are used to obtain programmable gain. The detailed structure of Amp1 and Amp2 is shown in Figures 6(a) and 6(b). With such implementation, Amp1 can provide a gain of 20, and Amp2 can provide a gain of 250/49.2/9.1 when gain[
Graph: Figure 6 The structure of adopted differential amplifier.
Graph: (b)
The chopper circuit is designed between Amp1 and Amp2 to reduce the offset voltage of the Hall device by integrating Hall voltage vhp and vhn in two clock phases [[
Graph: Figure 7 Chopper circuit structure.
The clock generator generates 5 clocks for the Hall core and chopper circuit [[
Graph: Figure 8 Phase diagram of the clock generator.
Graph: Figure 9 Ring D flip-flop structure.
Table 1 Parameters of 5 clocks.
/ps /ps Duty (min)/ns clk1 27.1 28.9 clk2 27.9 28.8 clk3 24.8 27.1 clk4 24.5 27.2 clk5 27.4 28.8
This work has already finished the circuit simulation and layout design. The layout design of the proposed Hall plate is shown in Figure 10. And the layout design of the entire system is shown in Figure 11. The simulation results show that the proposed Hall sensor system can amplify a 168 μv (Vpp) Hall voltage (with 96 μv offset) to 414 mv (with -27 mv offset). By using the proposed Hall sensor system, the Hall voltage is amplified by 2460 times.
Graph: Figure 10 Layout design of Hall device.
Graph: Figure 11 Layout design of the proposed Hall sensor system.
The performance summary is given in Table 2 (
Table 2 Main parameter compared with related work.
This [ [ [ Unit Tech 55 180 350 180 nm Plate size / / Num of plates 1 2 4 4 Spinning frequency 50M 250k 20k 1k Hz Area 0.113 1.16 11.55 / Power 4 0.12 3.3 1.6 mW Sensitivity 4.14 V/m 1.6 V/A/T 50 mA/T 50 mV/T Nonlinearity 0.2% 0.8% / % Offset 65 50 40 25
The simulation results show that the Hall sensor system front-end is capable of amplifying Hall voltage and reducing offset voltage. While integrated with ADC, the Hall voltage data can be easily processed with CPU or DSP. At the same time, since the design of the sensor system is based on the standard SMIC 55 nm process, with the necessary digital control logic and ADC part, the design is easy to integrate into the corresponding power specific SoC chips. The advantage of our Hall sensor system is small area consumption and easily integrated with SoC chips. And due to very high frequency spinning current technique, this Hall sensor system can process up to 100 kHz alternating magnetic field with no more than -3 dB attenuation.
In this paper, a lot of work has been carried out on CMOS Hall device design optimization, offset elimination, and signal amplification circuit technology, as well as Hall device simulation modeling and other aspects. Though we have obtained some meaningful results, there are still some deficiencies. The future plan involves the following directions.
We have mainly adopted the dynamic offset elimination technology of two-phase spinning-current. However, the residual offset is still high, which is due to the sensitivity of the Hall device to the fluctuation of the manufacturing process and junction field effect. We will use the four-phase spinning-current technology combined with the fully symmetrical structure of the Hall device design to improve the ability of eliminating the Hall device offset and obtaining lower residual offset. In addition, the negative feedback technology will be applied to the signal conditioning circuit to reduce the residual offset caused by the signal conditioning circuit itself. The mechanical stress compensation technology in a chip will also be explored to eliminate offset caused by mechanical stress after packaging.
The raw/processed data required to reproduce the results obtained in this study cannot be shared at this time because they are used in an ongoing study.
The authors declare no conflict of interest.
By Peng Li; Wei Xi; Xianggen Yin; Hao Yao and Huafeng Chen
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